imec Institutional Repository Browsing {{ collection }} by Author "Nashiyama, I."

Publication

Degradation and recovery of proton irradiated Si1-xGe x epitaxial devices

Ohyama, Hidenori

;

Vanhellemont, Jan

;

Takami, Y.

;

Hayama, Kiyoteru

;

Sunaga, H.

;

Nashiyama, I.

Journal article

1996, IEEE Transactions on Nuclear Devices, (43) 6, pt.1, p.3089-96

Publication

Degradation and recovery of Si1-xGex devices after proton irradiation

Ohyama, Hidenori

;

Vanhellemont, Jan

;

Takami, Y.

;

Hayama, Kiyoteru

;

Sunaga, H.

;

Nashiyama, I.

Oral presentation

1996, Materials Research Society Spring Meeting. Symposium F on GeSi and Related Compounds; April 9-11, 1996; San Francisco, Calif., U

Publication

Degradation of Si1-xGex epitxial devices by proton irradiation

Ohyama, Hidenori

;

Hayama, Kiyoteru

;

Vanhellemont, Jan

;

Poortmans, Jef

;

Caymax, Matty

;

Takami, Y.

Journal article

1996, Applied Physics Letters, (69) 16, p.2429-31

Publication

Degradation of SiGe devices by proton irradiation

Ohyama, Hidenori

;

Vanhellemont, Jan

;

Takami, Y.

;

Sunaga, H.

;

Nashiyama, I.

;

Uwatoko, Y.

Journal article

1997, Radiation Physics and Chemistry, (50) 4, p.341-346

Publication

Proton irradiation effects on the performance of Si1-xGex devices

Ohyama, Hidenori

;

Vanhellemont, Jan

;

Takami, Y.

;

Hayama, Kiyoteru

;

Tokyama, J.

;

Hakata, T.

Journal article

1996, Physica Status Solidi A, (158) 1, p.325-32

Browsing by Author "Nashiyama, I."