Browsing by Author "Nishimura, Tsuyoshi"
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Publication Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Proceedings paper2010-10, SiGe, Ge, and Related Compounds: Materials, Processing, and Devices, 10/10/2010, p.529-535Publication Formation and characterization of Ni(Ge1-ySny)/Ge1-xSnx/Ge contacts
Proceedings paper2010-09, 71st Fall Meeting of the Japan Society of Applied Physics, 14/09/2010Publication Formation of Ni(Ge1-xSnx) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Journal article2011, Solid-State Electronics, (60) 1, p.46-52Publication Formation of Ni(Ge1-ySny) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Oral presentation2010, Workshop: GeSn Developments and Future ApplicationsPublication Formation of Ni(Ge1-ySny) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Meeting abstract2010, 5th International SiGe Technology and Device Meeting - ISTDM, 24/05/2010Publication Ge1-xSnx stressors for strained-Ge CMOS
Meeting abstract2010, 5th International SiGe Technology and Device Meeting - ISTDM, 24/05/2010Publication Material assessment for uni-axial strained Ge pMOS -1: characterization of GeSn(B) materials
Oral presentation2010, Workshop: GeSn Developments and Future Applications