Browsing by Author "Noda, Taji"
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Publication Analysis of dopant diffusion and defects in SiGe channel quantum well for laser annealed device using an atomistic kinetic Monte Carlo approach
; ; ; ; Proceedings paper2011, IEEE International Electron Devices Meeting - IEDM, 5/12/2011, p.797-800Publication Modeling and experiments of dopant diffusion and defects for laser annealed junctions and advanced USJ
Proceedings paper2008, Doping Engineering for Front-End Processing, 24/03/2008, p.1070-E01-03