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Analysis of dopant diffusion and defects in SiGe channel quantum well for laser annealed device using an atomistic kinetic Monte Carlo approach
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Acq. date: 2026-05-17
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1905 since deposited on 2021-10-19
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Acq. date: 2026-05-17
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1 since deposited on 2021-10-19
Acq. date: 2026-05-17
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1905 since deposited on 2021-10-19
2last month
Acq. date: 2026-05-17
Citations