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Browsing by Author "Nourbakhsh, Amirhasan"

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    Bandgap opening in oxygen plasma-treated graphene

    Nourbakhsh, Amirhasan
    ;
    Cantoro, Mirco
    ;
    Vosch, Tom
    ;
    Pourtois, Geoffrey  
    ;
    Clemente, Francesca
    Journal article
    2010, Nanotechnology, (21) 43, p.435203
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    Bilayer graphene tunneling-FET for sub-0.2 V digital CMOS logic applications

    Agarwal Kumar, Tarun
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    Nourbakhsh, Amirhasan
    ;
    Raghavan, Praveen
    ;
    Radu, Iuliana  
    Journal article
    2014, IEEE Electron Device Letters, (35) 12, p.1308-1310
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    Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications

    Nourbakhsh, Amirhasan
    ;
    Agarwal Kumar, Tarun
    ;
    Klekachev, Alexander
    ;
    Asselberghs, Inge  
    Journal article
    2014-08, Nanotechnology, (25) 34, p.345203
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    Graphene for microelectronics

    van der Veen, Marleen  
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    Soree, Bart  
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    Cantoro, Mirco
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    Klekachev, Alexander
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    Nourbakhsh, Amirhasan
    Oral presentation
    2009, Graphene Workshop by The IAP-Phase VI
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    Graphene functionalization: a route towards the use of graphene for microelectronic applications

    Nourbakhsh, Amirhasan
    PHD thesis
    2012-05
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    Graphene oxide monolayers as an atomically thin seeding layers for atomic layer deposition of metal oxides

    Nourbakhsh, Amirhasan
    ;
    Adelmann, Christoph  
    ;
    Song, Yi
    ;
    Lee, ChangSeung
    ;
    Asselberghs, Inge  
    Journal article
    2015, Nanoscale, 7, p.10781-10789
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    Graphene synthesis via intermediate solid state reactions

    van der Veen, Marleen  
    ;
    Klekachev, Alexander
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    Cantoro, Mirco
    ;
    Nourbakhsh, Amirhasan
    Proceedings paper
    2011, Groningen Meets Leuven, 16/06/2011
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    Highly efficient and stable MoS2 FETs with reversible n-doping using a dehydrated poly(vynyl-alcohol) coating

    Lockhart de la Rosa, Cesar Javier  
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    Nourbakhsh, Amirhasan
    ;
    Heyne, Markus
    ;
    Asselberghs, Inge  
    Journal article
    2017, Nanoscale, (9) 1, p.258-265
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    Improving Ion/Ioff in bilayer graphene by molecular functionalization

    Cantoro, Mirco
    ;
    Nourbakhsh, Amirhasan
    ;
    Klekachev, Alexander
    ;
    Asselberghs, Inge  
    ;
    Heyns, Marc  
    Meeting abstract
    2012, ECS 222nd Fall Meeting, 7/10/2012, p.2799
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    Insight into the electronic structure of oxygen-functionalized single- and bilayer graphene

    Nourbakhsh, Amirhasan
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    Cantoro, Mirco
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    Klekachev, Alexander
    ;
    Pourtois, Geoffrey  
    Proceedings paper
    2011, TechConnect WORLD, 13/06/2011, p.17-20
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    Long-wavelength, confined optical phonons in InAs nanowires probed by Raman spectroscopy

    Cantoro, Mirco
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    Klekachev, Alexander
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    Nourbakhsh, Amirhasan
    ;
    Soree, Bart  
    ;
    Heyns, Marc  
    Journal article
    2011, European Physical Journal B, (79) 4, p.423-428
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    Metal to semiconductor transition in graphene by oxygen plasma treatment: a building block for graphene-based electronics

    Nourbakhsh, Amirhasan
    ;
    Cantoro, Mirco
    ;
    Klekachev, Alexander
    ;
    van der Veen, Marleen  
    Meeting abstract
    2011, IMAGINENANO, 11/04/2011
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    Modified, semiconducting graphene in contact with a metal: characterization of the Schottky diode

    Nourbakhsh, Amirhasan
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    Cantoro, Mirco
    ;
    Hadipour, Afshin  
    ;
    Vosch, Tom
    ;
    van der Veen, Marleen  
    Journal article
    2010, Applied Physics Letters, (97) 16, p.163101
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    Opening of a tunable bandgap in graphene via oxygen plasma treatment: a building block for graphene-based electronics

    Nourbakhsh, Amirhasan
    ;
    Cantoro, Mirco
    ;
    Pourtois, Geoffrey  
    ;
    Hadipour, Afshin  
    Meeting abstract
    2010, MRS Fall Meeting Symposium C: Fundamentals of Low-Dimensional Carbon Nanomaterials, 29/11/2010, p.C9.3
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    Performance of high-k gate dielectric graphene field-effect devices

    Klekachev, Alexander
    ;
    Cantoro, Mirco
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    Nourbakhsh, Amirhasan
    ;
    van der Veen, Marleen  
    Meeting abstract
    2009, 215th ECS Meeting, 24/05/2009, p.1315
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    Single layer vs. bilayer graphene: a comparative study of the effects of oxygen plasma treatment on their eectronic and optical properties

    Nourbakhsh, Amirhasan
    ;
    Cantoro, Mirco
    ;
    Klekachev, Alexander
    ;
    Pourtois, Geoffrey  
    ;
    Vosch, Tom
    Journal article
    2011, Journal of Physical Chemistry C, (115) 33, p.16619-16624
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    Substrate-limited mobility in single- and bi-layer graphene on dielectric materials

    Klekachev, Alexander
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    Cantoro, Mirco
    ;
    Nourbakhsh, Amirhasan
    ;
    van der Veen, Marleen  
    Proceedings paper
    2009, Graphene and Emerging Materials for Post-CMOS Applications, 24/05/2009, p.201-209
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    Toward ambient-stable molecular gated graphene-FET: A donor/acceptor hybrid architecture to achieve bandgap in bilayer graphene

    Nourbakhsh, Amirhasan
    ;
    Cantoro, Mirco
    ;
    Heyns, Marc  
    ;
    Sels, Bert
    ;
    De Gendt, Stefan  
    Proceedings paper
    2013, Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5, 12/05/2013, p.121-129
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    Transition from metallic to semiconducting behavior in oxygen plasma-treated single-layer graphene

    Nourbakhsh, Amirhasan
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    Cantoro, Mirco
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    Vosch, Tom
    ;
    Hofkens, johan
    ;
    Pourtois, Geoffrey  
    Proceedings paper
    2011, Interface Engineering for Post-CMOS Emerging Channel Materials, 25/04/2011, p.1336-p02-07
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    Tunable n- and p-type doping of single-layer graphene by engineering its interaction with the SiO2 support

    Nourbakhsh, Amirhasan
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    Cantoro, Mirco
    ;
    Li, Bing
    ;
    Muller, Robert
    ;
    De Feyter, Steven
    ;
    Heyns, Marc  
    Journal article
    2012, Physica Status Solidi. Rapid Research Letters, (6) 2, p.53-55
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