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Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications
Publication:
Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications
Date
2014-08
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Nourbakhsh, Amirhasan
;
Agarwal Kumar, Tarun
;
Klekachev, Alexander
;
Asselberghs, Inge
;
Cantoro, Mirco
;
Huyghebaert, Cedric
;
Heyns, Marc
;
Verhelst, Marian
;
Thean, Aaron
;
De Gendt, Stefan
Journal
Nanotechnology
Abstract
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1927
since deposited on 2021-10-22
Acq. date: 2025-10-23
Citations
Metrics
Views
1927
since deposited on 2021-10-22
Acq. date: 2025-10-23
Citations