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Browsing by Author "O'Donnell, K. P."

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    Cathodoluminescence from an InGaN/GaN MQW grown on an epitaxially laterally overgrown GaN epilayer

    Trager-Cowan, C.
    ;
    Osborne, I.
    ;
    Barisonzi, M.
    ;
    Manson-Smith, S. K.
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    O'Donnell, K. P.
    ;
    Jacobs, Koen
    Journal article
    1999, Physica Status Solidi B, (216) 1, p.347-350
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    Cathodoluminescence from InGaN/GaN MQW grown on an epitaxially lateral overgrown GaN epilayer

    Trager-Cowan, C.
    ;
    Mohammed, A.
    ;
    Manson-Smith, S. K.
    ;
    O'Donnell, K. P.
    ;
    Jacobs, Koen
    ;
    Moerman, Ingrid  
    Oral presentation
    1999, 3rd International Conference on Nitride Semiconductors - ICNS3
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    Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

    Vantomme, Andre  
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    Wu, Ming Fang
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    Hogg, S.
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    Langouche, G.
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    Jacobs, Koen
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    Moerman, Ingrid  
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    White, M. E.
    Journal article
    2000, MRS Internet Journal of Nitride Semiconductor Research, 5, Suppl. 1, p.W11.38
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    Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

    Vantomme, Andre  
    ;
    Wu, Ming Fang
    ;
    Hogg, S.
    ;
    Langouche, G.
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    Jacobs, Koen
    ;
    Moerman, Ingrid  
    ;
    White, M. E.
    Proceedings paper
    2000, GaN and Related Alloys - 1999, 29/11/1999, p.W11.38.1
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    Confocal microscopy and spectroscopy of InGaN epilayers on sapphire

    O'Donnell, K. P.
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    Tobin, M. J.
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    Bayliss, S. C.
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    Van der Stricht, Wim
    Journal article
    1999, Journal of Microscopy, (193) 2, p.105-108
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    Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer

    Nistor, Leona
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    Bender, Hugo  
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    Vantomme, Andre  
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    Wu, Ming Fang
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    Van Landuyt, J.
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    O'Donnell, K. P.
    Journal article
    2000, Applied Physics Letters, (77) 4, p.507-509
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    Energy-dispersive x-ray imaging of an InGaN/GaN bilayer on sapphire

    O'Donnell, K. P.
    ;
    Middleton, P. G.
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    Trager-Cowan, C.
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    Young, C.
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    Bayliss, S. C.
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    Fletcher, I.
    Journal article
    1998, Applied Physics Letters, (73) 22, p.3273-3275
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    Exciton localization and the Stokes' shift in InGaN epilayers

    Martin, R. W.
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    Middleton, P. G.
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    O'Donnell, K. P.
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    Van der Stricht, Wim
    Journal article
    1999, Appl. Phys. Lett., (74) 2, p.263-265
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    Hexagonal growth hillocks in GaN epilayers

    Middleton, P. G.
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    Trager-Cowan, C.
    ;
    Mohammed, A.
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    O'Donnell, K. P.
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    Van der Stricht, Wim
    Proceedings paper
    1997, III-V Nitrides, 2/12/1996, p.471-476
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    Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire

    Mohammed, A.
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    Trager-Cowan, C.
    ;
    Middleton, P. G.
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    O'Donnell, K. P.
    ;
    Van der Stricht, Wim
    Proceedings paper
    1997, Microscopy of Semiconducting Materials 1997, 7/04/1997, p.235-8
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    Intrinsic infrared luminescence from InGaN epilayers

    O'Donnell, K. P.
    ;
    Martin, R. W.
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    Pereira, S.
    ;
    Bangura, A.
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    White, M. E.
    ;
    Van der Stricht, Wim
    Journal article
    1999, Physica Status Solidi B, (216) 1, p.141-144
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    Intrinsic infrared luminescence from InGaN layers

    O'Donnell, K. P.
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    Martin, R. W.
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    Pereira, S.
    ;
    Bangura, A.
    ;
    White, M. E.
    ;
    Van der Stricht, Wim
    Meeting abstract
    1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 4/07/1999, p.44-45
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    Intrinsic InGaN luminescence from UV to IR

    Martin, R. W.
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    O'Donnell, K. P.
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    White, M. E.
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    Van, der Stricht. W.
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    Moerman, Ingrid  
    ;
    Demeester, Piet  
    Oral presentation
    1999, 1st UK Nitrides Consortium Conference; 24 September 1999; Glasgow, Scotland.
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    Optical linewidths of InGaN light emitting diodes and epilayers

    O'Donnell, K. P.
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    Breitkopf, T.
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    Kalt, H.
    ;
    Van der Stricht, Wim
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    Moerman, Ingrid  
    ;
    Demeester, Piet  
    Journal article
    1997, Applied Physics Letters, (70) 14, p.1843-1845
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    Optical spectroscopy and composition of GaN

    O'Donnell, K. P.
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    Martin, R. W.
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    White, M. E.
    ;
    Jacobs, Koen
    ;
    Van der Stricht, Wim
    ;
    Demeester, Piet  
    Proceedings paper
    2000, GaN and related alloys - 1999, 29/11/1999, p.W11.26.1-6
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    Optical spectroscopy and composition of InGaN

    O'Donnell, K. P.
    ;
    Martin, R. W.
    ;
    White, M. E.
    ;
    Jacobs, Koen
    ;
    Van der Stricht, Wim
    ;
    Demeester, Piet  
    Oral presentation
    1999, MRS Fall Meeting Symposium W: GaN and Related Alloys
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    Photoluminescence mapping and Rutherford backscattering of InGaN epilayers

    O'Donnell, K. P.
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    White, M. E.
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    Pereira, S.
    ;
    Wu, Ming Fang
    ;
    Vantomme, Andre  
    ;
    Van der Stricht, Wim
    Meeting abstract
    1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 4/06/1999, p.87
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    Photoluminescence mapping and Rutherford backscattering spectrometry of InGaN epilayers

    O'Donnell, K. P.
    ;
    White, M. E.
    ;
    Pereira, S.
    ;
    Wu, Ming Fang
    ;
    Vantomme, Andre  
    ;
    Van der Stricht, Wim
    Oral presentation
    1999, 1st UK Nitrides Consortium Conference
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    Photoluminescence mapping and Rutherford backscattering spectrometry of InGaN epilayers

    O'Donnell, K. P.
    ;
    White, M. E.
    ;
    Pereira, S.
    ;
    Wu, Ming Fang
    ;
    Vantomme, Andre  
    ;
    Van der Stricht, Wim
    Journal article
    1999, Physica Status Solidi B, (216) 1, p.171-174
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    Probing nitride thin films in 3-dimensions using a variable energy electron beam

    Trager-Cowan, C.
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    Middleton, P. G.
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    Mohammed, A.
    ;
    Manson-Smith, S. K.
    ;
    Osborne, I.
    ;
    Barisonzi, M.
    Oral presentation
    1999, MRS Fall Meeting; November 1999; Boston, USA.
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