Browsing by Author "Odnoblyudov, Vlad"
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Publication 650 V p-GaN gate power HEMTs on 200 mm engineered substrates
Proceedings paper2019, 7th Workshop on Wide Bandgap Power Devices and Applications - WIPDA 2019, 29/10/2019, p.292-296Publication Epitaxial growth and characterization of P-GaN gated HEMT on compliant poly-AlN substrate for e-mode power devices
Meeting abstract2018, International Workshop on Nitride Semiconductors - IWN, 11/11/2018, p.GR12-7Publication Integration of 650 V GaN power ICs on 200 mm engineered substrates
; ; ; ; ; Journal article2020, IEEE Transactions on Semiconductor Manufacturing, (33) 4, p.534-538Publication Integration of GaN power ICs on 200 mm engineered substrates
; ; ; ; ; Proceedings paper2020, 2020 International Conference on Compound Semiconductor Manufacturing Technology, 24/05/2020, p.241-244