Browsing by Author "Odnoblyudov, Vladimir"
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Publication Demonstration of GaN integrated half-bridge with on-chip drivers on 200-mm engineered substrates
Journal article2019, IEEE Electron Device Letters, (40) 9, p.1499-1502Publication Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
; ; ; ; ; ; Marx, MatthiasProceedings paper2021, 2021 International Conference on Compound Semiconductor Manufacturing Technology (CS Mantech), 24/05/2021Publication Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V
Meeting abstract2019, DGKK Workshop "Epitaxy of III-V Semiconductors", 5/12/2019Publication p-GaN gate HEMTs, RTL logic, and gate driver monolithically integrated on 200 mm QST® substrates for GaN ICs
Meeting abstract2019, 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), 7/07/2019