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Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V
Publication:
Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V
Date
2019
Meeting abstract
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Fahle, Dirk
;
Zhao, Ming
;
Geens, Karen
;
Li, Xiangdong
;
Wellekens, Dirk
;
Magnani, Alessandro
;
Amirifar, Nooshin
;
Bakeroot, Benoit
;
You, Shuzhen
;
Odnoblyudov, Vladimir
;
Aktas, Ozgur
;
Basceri, Cem
;
Marcon, Denis
;
Groeseneken, Guido
;
Decoutere, Stefaan
;
Hahn, Herwig
;
Heuken, Michael
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Abstract
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2168
since deposited on 2021-10-27
Acq. date: 2025-10-23
Citations
Metrics
Views
2168
since deposited on 2021-10-27
Acq. date: 2025-10-23
Citations