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Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V

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dc.contributor.authorFahle, Dirk
dc.contributor.authorZhao, Ming
dc.contributor.authorGeens, Karen
dc.contributor.authorLi, Xiangdong
dc.contributor.authorWellekens, Dirk
dc.contributor.authorMagnani, Alessandro
dc.contributor.authorAmirifar, Nooshin
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorYou, Shuzhen
dc.contributor.authorOdnoblyudov, Vladimir
dc.contributor.authorAktas, Ozgur
dc.contributor.authorBasceri, Cem
dc.contributor.authorMarcon, Denis
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorHahn, Herwig
dc.contributor.authorHeuken, Michael
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorMagnani, Alessandro
dc.contributor.imecauthorAmirifar, Nooshin
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorHahn, Herwig
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecMagnani, Alessandro::0000-0001-6719-7467
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-27T09:07:40Z
dc.date.available2021-10-27T09:07:40Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32946
dc.source.conferenceDGKK Workshop "Epitaxy of III-V Semiconductors"
dc.source.conferencedate5/12/2019
dc.source.conferencelocationDresden Germany
dc.title

Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V

dc.typeMeeting abstract
dspace.entity.typePublication
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