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Browsing by Author "Palestri, P."

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    Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis

    Asanovski, R.
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    Arimura, Hiroaki  
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    de Marneffe, Jean-Francois  
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    Palestri, P.
    ;
    Horiguchi, Naoto  
    Journal article
    2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 3, p.1745-1751
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    Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K

    Asanovski, Ruben  
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    Grill, Alexander  
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    Franco, Jacopo  
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    Palestri, P.
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    Mertens, Hans  
    Journal article
    2024, SOLID-STATE ELECTRONICS, (215) May, p.Art. 108881
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    Design of ultra-wideband low-noise amplifiers in 45nm CMOS technology: comparison between planar bulk and SOI FinFET devices

    Ponton, Davide
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    Palestri, P.
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    Esseni, D.
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    Selmi, L.
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    Tiebout, M.
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    Parvais, Bertrand  
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    Siprak, D.
    Journal article
    2009, IEEE Transactions on Circuits and Systems I: Regular Papers, (56) 5, p.920-932
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    Design strategies for SOI FinFET low-noise amplifiers: dealing with flicker noise

    Ponton, Davide
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    Palestri, P.
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    Parvais, Bertrand  
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    Fulde, Michael
    Proceedings paper
    2009, 5th Workshop on the Thematic Network on Silicon Insulator Technology, Devices and Circuits - EUROSOI, 19/01/2009
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    Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs

    Serra, N.
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    Conzatti, F.
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    Esseni, D.
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    De Michielis, M.
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    Palestri, P.
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    Selmi, L.
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    Thomas, S.
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    Whall, T. E.
    Proceedings paper
    2009, IEEE International Electron Devices Meeting - IEDM, 7/12/2009, p.71-74
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    New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications

    Asanovski, R.
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    Grill, Alexander  
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    Franco, Jacopo  
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    Palestri, P.
    ;
    Beckers, Arnout  
    ;
    Kaczer, Ben  
    Proceedings paper
    2022, International Electron Devices Meeting (IEDM), DEC 03-07, 2022

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