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Browsing by Author "Perello, Carles"

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    A high performance 0.18µm elevated source/drain technology with improved manufacturability

    Augendre, Emmanuel
    ;
    Rooyackers, Rita
    ;
    Vandamme, Ewout
    ;
    Perello, Carles
    ;
    Van Dievel, Marc  
    Proceedings paper
    1999, ESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference, 13/09/1999, p.636-639
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    A high performance of 0.18μm CMOS technology designed for manufacturability

    Badenes, Gonçal
    ;
    Hendriks, Marton
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    Perello, Carles
    ;
    Deferm, Ludo  
    Proceedings paper
    1997, ESSDERC '97: Proceedings of the 27th European Solid-State Device Research Conference, 22/09/1997, p.404-407
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    A new dummy-free shallow trench isolation concept for mixed-signal applications

    Badenes, Gonçal
    ;
    Rooyackers, Rita
    ;
    Augendre, Emmanuel
    ;
    Vandamme, Ewout
    ;
    Perello, Carles
    Proceedings paper
    1999, ULSI Process Integration. Proceedings of the First International Symposium, 17/10/1999, p.231-241
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    A new dummy-free shallow trench isolation concept for mixed-signal applications

    Badenes, Gonçal
    ;
    Rooyackers, Rita
    ;
    Augendre, Emmanuel
    ;
    Vandamme, Ewout
    ;
    Perello, Carles
    Journal article
    2000, Journal of the Electrochemical Society, (147) 10, p.3287-3282
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    Elevated source/drain by sacrificial selective epitaxy for high performance deep submicron CMOS: process window versus complexity

    Augendre, Emmanuel
    ;
    Rooyackers, Rita
    ;
    Caymax, Matty  
    ;
    Vandamme, Ewout
    ;
    De Keersgieter, An  
    Journal article
    2000, IEEE Trans. Electron Devices, (47) 7, p.1484-1491
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    L-shape spacer architecture for low cost, high performance CMOS

    Augendre, Emmanuel
    ;
    Perello, Carles
    ;
    Vandamme, Ewout
    ;
    Pochet, Sandrine
    ;
    Rooyackers, Rita
    Proceedings paper
    2001, ULSI Process Integration II; 26 March 2001; Washington, D.C., USA., p.297-304
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    Optimisation of critical parameters in a low cost, high performance deep submicron CMOS technology

    Badenes, Gonçal
    ;
    Perello, Carles
    ;
    Rupp, Andreas
    ;
    Vandamme, Ewout
    ;
    Augendre, Emmanuel
    Proceedings paper
    1999, ESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference, 13/09/1999, p.628-631
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    Test structures for MCM-D technology characterization

    Lozano, M.
    ;
    Santander, J.
    ;
    Cabruja, E.
    ;
    Perello, Carles
    ;
    Ullan, M.
    ;
    Lora-Tamayo, E.
    ;
    Doyle, R.
    Journal article
    1999, IEEE Trans. Semiconductor Manufacturing, (12) 2, p.184-192

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