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Browsing by Author "Pipeleers, B."

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    Dose dependent phenomena arising from implantation of Er into Si

    Hogg, S.M.
    ;
    Pipeleers, B.
    ;
    Vantomme, Andre  
    ;
    Bender, Hugo  
    ;
    Richard, Olivier  
    ;
    Swart, M.
    Journal article
    2005, J. Applied Physics, (97) 8, p.083514-1-083514-8
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    Lattice expansion induced by Zn channeled implantation in GaN

    Ding, F.R.
    ;
    He, W.H.
    ;
    Vantomme, Andre  
    ;
    Zhao, Q.
    ;
    Pipeleers, B.
    ;
    Jacobs, K.
    ;
    Moerman, Ingrid  
    Journal article
    2002, Materials Science in Semiconductor Processing, (5) 6, p.511-514
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    Suppression of rare-earth implantation-induced damage in GaN

    Vantomme, Andre  
    ;
    Hogg, S. M.
    ;
    Wu, Ming Fang
    ;
    Pipeleers, B.
    ;
    Swart, M.
    ;
    Goodman, S.
    ;
    Auret, D.
    Journal article
    2001, Nuclear Instruments & Methods in Physics Research Section B, 175-177, p.148-153
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    Zn channeled implantation in GaN: damages investigated by using high resolution XTEM and channeling RBS

    Ding, F.R.
    ;
    He, W.
    ;
    Vantomme, Andre  
    ;
    Zhao, Q.
    ;
    Pipeleers, B.
    ;
    Jacobs, K.
    ;
    Moerman, Ingrid  
    Journal article
    2003, Materials Science and Engineering B, (98) 1, p.70-73

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