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Browsing by Author "Puzenko, O."

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    Deep levels in high-energy proton-irradiated tin-doped n-type Czochralskii silicon

    Simoen, Eddy  
    ;
    Claeys, Cor
    ;
    Neimash, V. B.
    ;
    Kraitchinskii, A.
    ;
    Kras'ko, N.
    ;
    Puzenko, O.
    ;
    Blondeel, A.
    Journal article
    2000, Applied Physics Letters, (76) 20, p.2838-2840
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    Identification of Sn-V related acceptor levels in irradiated tin-doped n-type silicon

    Simoen, Eddy  
    ;
    Claeys, Cor
    ;
    Neimash, V. B.
    ;
    Kraitchinskii, A.
    ;
    Kras'ko, M.
    ;
    Puzenko, O.
    ;
    Blondeel, A.
    Proceedings paper
    2000, General Scientific Meeting Belgische Natuurkundige Vereniging / Société Belge de Physique, 25/05/2000, p.CM41
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    Influence of tin impurities on the generation and annealing of thermal oxygen donors in Czochralski silicon at 450 degrees C

    Neimash, V. B.
    ;
    Kraitchinskii, A.
    ;
    Kras'ko, M.
    ;
    Puzenko, O.
    ;
    Claeys, Cor
    ;
    Simoen, Eddy  
    ;
    Svensson, B.
    Journal article
    2000, Journal of the Electrochemical Society, (147) 7, p.2727-2733
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    Tin doping effects in silicon

    Simoen, Eddy  
    ;
    Claeys, Cor
    ;
    Neimash, V. B.
    ;
    Kraitchinskii, A.
    ;
    Kras'ko, M.
    ;
    Puzenko, O.
    ;
    Blondeel, A.
    Proceedings paper
    2000, High Purity Silicon VI, 22/10/2000, p.223-235
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    Tin doping of silicon for controlling oxygen precipitation and radiation hardness

    Claeys, Cor
    ;
    Simoen, Eddy  
    ;
    Neimash, V. B.
    ;
    Kraitchinskii, A.
    ;
    Krask'o, M.
    ;
    Puzenko, O.
    ;
    Blondeel, A.
    Journal article
    2001, Journal of the Electrochemical Society, (148) 12, p.G738-G745
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    Tin-related deep levels in proton-irradiated n-type silicon

    Simoen, Eddy  
    ;
    Claeys, Cor
    ;
    Neimash, V. B.
    ;
    Kraitchinskii, A.
    ;
    Kras'ko, M.
    ;
    Puzenko, O.
    ;
    Blondeel, A.
    Proceedings paper
    2000, Proceedings 2nd ENDEASD Workshop, 27/06/2000, p.147-156

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