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Browsing by Author "Raghavan, N."

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    New understanding of dielectric breakdown in advanced FinFET devices – physical, electrical, statistical and multiphysics study

    Mei, S
    ;
    Bosman, M.
    ;
    Raghavan, N.
    ;
    Linten, Dimitri  
    ;
    Groeseneken, Guido  
    ;
    Horiguchi, Naoto  
    ;
    Pey, K.L.
    Proceedings paper
    2016, IEEE International Devices Meeting - IEDM, 3/12/2016, p.397-398
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    Threshold shift observed in resistive switching in metal-oxide-semiconductor transistors and the effect of forming gas anneal

    Liu, W.H.
    ;
    Pey, K.L.
    ;
    Wu, X.
    ;
    Raghavan, N.
    ;
    Padovani, A.
    ;
    Larcher, L.
    ;
    Vandelli, L.
    ;
    Bosman, M.
    Journal article
    2011, Applied Physics Letters, (99) 23, p.232909

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