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Browsing by Author "Raskin, G."

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    200 mm Germanium-on-insulator(GeOI) by smart cut technology and recent GeOI MOSFETs achievements

    Akatsu, T.
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    Deguet, C.
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    Sanchez, L.
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    Richtarch, C.
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    Allibert, F.
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    Letertre, F.
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    Mazure, C.
    Proceedings paper
    2005, Proceedings of the IEEE International SOI Conference, 3/10/2005, p.137-138
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    A study of the influence of typical wet chemical treatments on the germanium wafer surface

    Onsia, Bart  
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    Conard, Thierry  
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    De Gendt, Stefan  
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    Heyns, Marc  
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    Hoflijk, Ilse  
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    Mertens, Paul  
    Oral presentation
    2004, 7th International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS
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    A study of the influence of typical wet chemical treatments on the germanium wafer surface

    Onsia, Bart  
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    Conard, Thierry  
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    De Gendt, Stefan  
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    Heyns, Marc  
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    Hoflijk, Ilse  
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    Mertens, Paul  
    Proceedings paper
    2005, Ultra Clean Processing of Silicon Surfaces VII: Proceedings of the 7th International Symposium, 20/09/2004, p.27-30
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    Determination of metallic contaminants on Ge wafers using direct- and droplet sandwich etch- total reflection X-ray fluorescence spectrometry

    Hellin, David  
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    Bearda, Twan
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    Zhao, Chao
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    Raskin, G.
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    Mertens, Paul  
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    De Gendt, Stefan  
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    Heyns, Marc  
    Journal article
    2003-12, Spectrochim. Acta B, (58) 12, p.2093-2104
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    Ge deep sub-micron pFETs with etched TaN metal gate on a High-K dielectric, fabricated in a 200mm silicon prototyping line

    De Jaeger, Brice  
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    Houssa, Michel  
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    Satta, Alessandra
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    Kubicek, Stefan  
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    Verheyen, Peter  
    Proceedings paper
    2004, Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC, 21/09/2004, p.189-192
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    Germanium deep-sub micron PMOS transistors with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm prototyping line

    Meuris, Marc  
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    De Jaeger, Brice  
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    Kubicek, Stefan  
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    Verheyen, Peter  
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    Van Steenbergen, Jan  
    Proceedings paper
    2004, SiGe: Materials, Processing, and Devices. Proceedings of the 1st International Sympsoium, 3/10/2004, p.693-700
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    Germanium deep-submicron p-FET and n-FET devices, fabricated on germanium-on-insulator substrates

    Meuris, Marc  
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    De Jaeger, Brice  
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    Van Steenbergen, Jan  
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    Bonzom, Renaud
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    Caymax, Matty  
    Book chapter
    2007
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    Grown-in lattice defects and diffusion in czochralski-grown germanium

    Vanhellemont, J.
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    De Gryse, O.
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    Hens, S.
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    Vanmeerbeek, P.
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    Poelman, D.
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    Clauws, P.
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    Simoen, Eddy  
    Journal article
    2004, Defect and Diffusion Forum, 230-232, p.149-176
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    Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates

    De Jaeger, Brice  
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    Bonzom, Renaud
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    Leys, Frederik
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    Richard, Olivier  
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    Van Steenbergen, Jan  
    Journal article
    2005-06, Microelectronic Engineering, 80, p.26-29
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    The future of high-k on pure germanium and its importance for Ge CMOS

    Meuris, Marc  
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    Delabie, Annelies  
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    Van Elshocht, Sven  
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    Kubicek, Stefan  
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    Verheyen, Peter  
    Journal article
    2005, Materials Science in Semiconductor Processing, (8) 1_3, p.203-207

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