Browsing by Author "Raskin, G."
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Publication 200 mm Germanium-on-insulator(GeOI) by smart cut technology and recent GeOI MOSFETs achievements
;Akatsu, T. ;Deguet, C. ;Sanchez, L. ;Richtarch, C. ;Allibert, F. ;Letertre, F.Mazure, C.Proceedings paper2005, Proceedings of the IEEE International SOI Conference, 3/10/2005, p.137-138Publication A study of the influence of typical wet chemical treatments on the germanium wafer surface
Oral presentation2004, 7th International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSSPublication A study of the influence of typical wet chemical treatments on the germanium wafer surface
Proceedings paper2005, Ultra Clean Processing of Silicon Surfaces VII: Proceedings of the 7th International Symposium, 20/09/2004, p.27-30Publication Determination of metallic contaminants on Ge wafers using direct- and droplet sandwich etch- total reflection X-ray fluorescence spectrometry
; ;Bearda, Twan ;Zhao, Chao ;Raskin, G.; ; Journal article2003-12, Spectrochim. Acta B, (58) 12, p.2093-2104Publication Ge deep sub-micron pFETs with etched TaN metal gate on a High-K dielectric, fabricated in a 200mm silicon prototyping line
Proceedings paper2004, Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC, 21/09/2004, p.189-192Publication Germanium deep-sub micron PMOS transistors with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm prototyping line
Proceedings paper2004, SiGe: Materials, Processing, and Devices. Proceedings of the 1st International Sympsoium, 3/10/2004, p.693-700Publication Germanium deep-submicron p-FET and n-FET devices, fabricated on germanium-on-insulator substrates
Book chapter2007Publication Grown-in lattice defects and diffusion in czochralski-grown germanium
Journal article2004, Defect and Diffusion Forum, 230-232, p.149-176Publication Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates
Journal article2005-06, Microelectronic Engineering, 80, p.26-29Publication The future of high-k on pure germanium and its importance for Ge CMOS
Journal article2005, Materials Science in Semiconductor Processing, (8) 1_3, p.203-207