Browsing by Author "Reimbold, G."

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A new method for quickly evaluating reversible and permanent components of the BTI degradation

Garros, X.
;
Subirats, Alexandre
;
Reimbold, G.
;
Gaillard, F.
;
Diouf, C.
;
Federspiel, X.
;
Huard, V.
Proceedings paper
2018, 2018 IEEE International Reliability Physics Symposium - IRPS, 11/03/2018, p.P-RT.6
Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures

Marchand, B.
;
Cretu, B.
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Ghibaudo, G.
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Balestra, F.
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Blachier, D.
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Leroux, C.
;
Deleonibus, S.
Journal article
2002, Solid-State Electronics, (46) 3, p.337-342