Browsing by Author "Resinger, Hans"

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Experimental characterization of BTI defects

Kaczer, Ben
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Afanasiev, Valeri
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Rott, Karina
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Cerbu, F.
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Franco, Jacopo
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Grasser, Tibor
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Madia, O.
Proceedings paper
2013, SISPAD Satellite Workshop: Modelling of Reliability and Degradation of Nanoelectronic Devices, 3/09/2013, p.444-450
Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: from single defects to lifetimes

Grasser, Tibor
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Waltl, Michael
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Wimmer, Yannick
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Goes, Wolfgang
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Kosik, R.
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Rzepa, Gerhard
Proceedings paper
2015, IEEE International Electron Devices Meeting - IEDM, 7/12/2015, p.535-538
SrTiO3 for sub-20 nm DRAM technology nodes – characterization and modeling

Kaczer, Ben
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Larcher, Luca
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Vandelli, Luca
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Resinger, Hans
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Popovici, Mihaela Ioana
Proceedings paper
2014, IEEE Semiconductor Interfaces Specialist Conference - SISC, 10/12/2014