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Browsing by Author "Rittersma, Z.M."

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    Band alignment at the interface of (100)Si with HfxTa1-xOy high-k dielectric layers

    Afanasiev, Valeri  
    ;
    Stesmans, Andre  
    ;
    Zhao, Chao
    ;
    Caymax, Matty  
    ;
    Rittersma, Z.M.
    ;
    Maes, Jan  
    Journal article
    2005, Applied Physics Letters, (86) 7, p.072108-1-072108-3
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    Band alignment between (100)Si and Hf-based complex metal oxides

    Afanasiev, Valeri  
    ;
    Stesmans, Andre  
    ;
    Zhao, Chao
    ;
    Caymax, Matty  
    ;
    Rittersma, Z.M.
    ;
    Maes, Jan  
    Journal article
    2005, Microelectronic Engineering, (80) 80, p.102-105
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    Properties of HfTaxOy high-k layers deposited by ALCVD

    Zhao, Chao
    ;
    Rittersma, Z.M.
    ;
    van Berkum, J.G.M.
    ;
    Snijders, J.H.M.
    ;
    Hendriks, A.
    ;
    Breimer, P.
    Proceedings paper
    2005, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 15/05/2005, p.133-140

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