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Browsing by Author "Robinson, Colin"

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    Electron trapping in HfAI0 high-k stack for Flash memory applications: an origin of Vth window closure during cyclling operations

    Zheng, X.F.
    ;
    Robinson, Colin
    ;
    Zhang, W.D.
    ;
    Zhang, Jian Fu
    ;
    Govoreanu, Bogdan  
    ;
    Van Houdt, Jan  
    Journal article
    2011-05, IEEE Transactions on Electron Devices, (58) 5, p.1344-1351
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    Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations

    Tang, Baojun
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    Zhang, Weidong
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    Breuil, Laurent  
    ;
    Robinson, Colin
    ;
    Wang, Yunqi
    Journal article
    2014, Microelectronics Reliability, (54) 9_10, p.2258-2261
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    Read and pass disturbance in the programmed states of floating gate Flash memory cells with high- $j inter-poly gate dielectric stacks

    Tang, Baojun
    ;
    Robinson, Colin
    ;
    Zhang, Weidong
    ;
    Zhang, Fujian
    ;
    Degraeve, Robin  
    ;
    Blomme, Pieter  
    Journal article
    2013-07, IEEE Transactions on Electron Devices, (60) 7, p.2261-2267

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