Skip to content
Institutional repository
Communities & Collections
Browse all items
Scientific publications
Open knowledge
Log In
imec Publications
Articles
Electron trapping in HfAI0 high-k stack for Flash memory applications: an origin of Vth window closure during cyclling operations
Publication:
Electron trapping in HfAI0 high-k stack for Flash memory applications: an origin of Vth window closure during cyclling operations
Copy permalink
Date
2011
Journal article
Simple item page
Full metadata
Statistics
Loading...
Loading...
Files
24015.pdf
426.1 KB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Zheng, X.F.
;
Robinson, Colin
;
Zhang, W.D.
;
Zhang, Jian Fu
;
Govoreanu, Bogdan
;
Van Houdt, Jan
Journal
IEEE Transactions on Electron Devices
Abstract
Description
Statistics
Views
1911
since deposited on 2021-10-19
Acq. date: 2026-08-03
Citations
Statistics
Views
1911
since deposited on 2021-10-19
Acq. date: 2026-08-03
Citations