Browsing by Author "Scarrozza, Marco"
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Publication A first-principles study of the structural and electronic properties of III-V/thermal oxide interfaces
Journal article2009, Microelectronic Engineering, (86) 7_9, p.1747-1750Publication A theoretical study of the initial oxidation of the GaAs(001)-beta2(2x4) surface
Journal article2009, Applied Physics Letters, (95) 25, p.253504Publication Adsorption of molecular oxygen on the reconstructed beta2(2x4)-GaAs(001) surface: a first-principles study
Journal article2009, Surface Science, (603) 1, p.203-208Publication Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation
Journal article2011, Surface Science, (605) 19_20, p.1778-1783Publication First-principles simulations of the oxidation of the GaAs(001)-beta2(2x4) surface
Oral presentation2008, 39th IEEE Semiconductor Interface Specialists ConferencePublication Ge and III/V devices for advanced CMOS
; ; ; ;Brunco, David; Proceedings paper2009, 10th International Conference on Ultimate Integration of Silicon - ULIS, 18/03/2009, p.83-86Publication Ge and III/V devices on Si for advanced CMOS
Meeting abstract2009, 5th Handai Nanoscience and Nanotechnology International Symposium, 1/09/2009Publication Ge and III/V: the CMOS of the future
Oral presentation2007, 38th Semiconductor Interface Specialists Conference - SISCPublication High mobility channel materials and novel devices for scaling of nanoelectronics beyond the Si roadmap
Proceedings paper2009, High-k Dielectrics on Semiconductors with High Carrier Mobility, 30/11/2009, p.1194-A07-01Publication High-k dielectrics and interface passivation for Ge and III/V devices on silicon for advanced CMOS
Proceedings paper2009, High Dielectric Constant Materials and Gate Stacks 7, 4/10/2009, p.51-65Publication High-k dielectrics and interface passivation for Ge and III/V devices on silicon for advanced CMOS
Meeting abstract2009, 216th ECS Meeting, 4/10/2009, p.2109Publication Interfaces of high-k dielectrics on GaAs: their common features and the relationship with Fermi level pinning
Journal article2009, Microelectronic Engineering, (86) 7_9, p.1529-1535Publication Molecular Beam Epitaxy study of a common a-GeO2 interfacial passivation layer for Ge- and GaAs-based MOS heterostructures
Proceedings paper2009, CMOS Gate Stack Scaling. Materials, Interfaces, and Reliability, 13/04/2009, p.C06.07Publication Oxidation of the GaAs(001) surface: Insights from first-principles calculations
Journal article2012, Physical Review B, (85) 19, p.195307Publication Scaling of nanoelectronics beyond the Si roadmap
; ;Bellenger, Florence; ;Cantoro, Mirco; Meeting abstract2009, 1st International Workshop on Si based Nano-Electronics and -Photonics, 20/09/2009Publication Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices
; ;Bellenger, Florence; ; ;Cantoro, MircoProceedings paper2010, Optical Microlithography XXIII, 21/02/2010, p.764003Publication Universal stress-defect correlation at (100)semiconductor/oxide interfaces
Journal article2011, Applied Physics Letters, (98) 14, p.141901