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Browsing by Author "Scarrozza, Marco"

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    A first-principles study of the structural and electronic properties of III-V/thermal oxide interfaces

    Scarrozza, Marco
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    Pourtois, Geoffrey  
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    Houssa, Michel  
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    Caymax, Matty  
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    Stesmans, Andre  
    Journal article
    2009, Microelectronic Engineering, (86) 7_9, p.1747-1750
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    A theoretical study of the initial oxidation of the GaAs(001)-beta2(2x4) surface

    Scarrozza, Marco
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    Pourtois, Geoffrey  
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    Houssa, Michel  
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    Caymax, Matty  
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    Stesmans, Andre  
    Journal article
    2009, Applied Physics Letters, (95) 25, p.253504
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    Adsorption of molecular oxygen on the reconstructed beta2(2x4)-GaAs(001) surface: a first-principles study

    Scarrozza, Marco
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    Pourtois, Geoffrey  
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    Houssa, Michel  
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    Caymax, Matty  
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    Meuris, Marc  
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    Heyns, Marc  
    Journal article
    2009, Surface Science, (603) 1, p.203-208
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    Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation

    Merckling, Clement  
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    Chang, Y.C.
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    Lu, C.Y.
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    Penaud, J.
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    Brammertz, Guy  
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    Scarrozza, Marco
    Journal article
    2011, Surface Science, (605) 19_20, p.1778-1783
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    First-principles simulations of the oxidation of the GaAs(001)-beta2(2x4) surface

    Scarrozza, Marco
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    Pourtois, Geoffrey  
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    Houssa, Michel  
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    Meuris, Marc  
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    Heyns, Marc  
    Oral presentation
    2008, 39th IEEE Semiconductor Interface Specialists Conference
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    Ge and III/V devices for advanced CMOS

    Heyns, Marc  
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    Adelmann, Christoph  
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    Brammertz, Guy  
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    Brunco, David
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    Caymax, Matty  
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    De Jaeger, Brice  
    Proceedings paper
    2009, 10th International Conference on Ultimate Integration of Silicon - ULIS, 18/03/2009, p.83-86
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    Ge and III/V devices on Si for advanced CMOS

    Heyns, Marc  
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    Bellenger, Florence
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    Brammertz, Guy  
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    Caymax, Matty  
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    De Gendt, Stefan  
    Meeting abstract
    2009, 5th Handai Nanoscience and Nanotechnology International Symposium, 1/09/2009
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    Ge and III/V: the CMOS of the future

    Heyns, Marc  
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    Adelmann, Christoph  
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    Bellenger, Florence
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    Brammertz, Guy  
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    Brunco, David
    Oral presentation
    2007, 38th Semiconductor Interface Specialists Conference - SISC
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    High mobility channel materials and novel devices for scaling of nanoelectronics beyond the Si roadmap

    Heyns, Marc  
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    Bellenger, Florence
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    Brammertz, Guy  
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    Caymax, Matty  
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    De Gendt, Stefan  
    Proceedings paper
    2009, High-k Dielectrics on Semiconductors with High Carrier Mobility, 30/11/2009, p.1194-A07-01
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    High-k dielectrics and interface passivation for Ge and III/V devices on silicon for advanced CMOS

    Heyns, Marc  
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    Bellenger, Florence
    ;
    Brammertz, Guy  
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    Caymax, Matty  
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    De Jaeger, Brice  
    Proceedings paper
    2009, High Dielectric Constant Materials and Gate Stacks 7, 4/10/2009, p.51-65
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    High-k dielectrics and interface passivation for Ge and III/V devices on silicon for advanced CMOS

    Heyns, Marc  
    ;
    Adelmann, Christoph  
    ;
    Brammertz, Guy  
    ;
    Caymax, Matty  
    ;
    De Jaeger, Brice  
    Meeting abstract
    2009, 216th ECS Meeting, 4/10/2009, p.2109
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    Interfaces of high-k dielectrics on GaAs: their common features and the relationship with Fermi level pinning

    Caymax, Matty  
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    Brammertz, Guy  
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    Delabie, Annelies  
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    Sioncke, Sonja
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    Lin, Dennis  
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    Scarrozza, Marco
    Journal article
    2009, Microelectronic Engineering, (86) 7_9, p.1529-1535
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    Molecular Beam Epitaxy study of a common a-GeO2 interfacial passivation layer for Ge- and GaAs-based MOS heterostructures

    Merckling, Clement  
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    Penaud, Julien
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    Bellenger, Florence
    ;
    Kohen, David
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    Brammertz, Guy  
    Proceedings paper
    2009, CMOS Gate Stack Scaling. Materials, Interfaces, and Reliability, 13/04/2009, p.C06.07
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    Oxidation of the GaAs(001) surface: Insights from first-principles calculations

    Scarrozza, Marco
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    Pourtois, Geoffrey  
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    Houssa, Michel  
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    Heyns, Marc  
    ;
    Stesmans, Andre  
    Journal article
    2012, Physical Review B, (85) 19, p.195307
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    Scaling of nanoelectronics beyond the Si roadmap

    Heyns, Marc  
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    Bellenger, Florence
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    Brammertz, Guy  
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    Cantoro, Mirco
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    Caymax, Matty  
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    De Gendt, Stefan  
    Meeting abstract
    2009, 1st International Workshop on Si based Nano-Electronics and -Photonics, 20/09/2009
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    Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices

    Heyns, Marc  
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    Bellenger, Florence
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    Brammertz, Guy  
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    Caymax, Matty  
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    Cantoro, Mirco
    ;
    De Gendt, Stefan  
    Proceedings paper
    2010, Optical Microlithography XXIII, 21/02/2010, p.764003
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    Universal stress-defect correlation at (100)semiconductor/oxide interfaces

    Houssa, Michel  
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    Scarrozza, Marco
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    Pourtois, Geoffrey  
    ;
    Afanas'ev, Valery
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    Stesmans, Andre  
    Journal article
    2011, Applied Physics Letters, (98) 14, p.141901

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