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Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation
Publication:
Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation
Date
2011
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Merckling, Clement
;
Chang, Y.C.
;
Lu, C.Y.
;
Penaud, J.
;
Brammertz, Guy
;
Scarrozza, Marco
;
Pourtois, Geoffrey
;
Kwo, J.
;
Hong, M.
;
Dekoster, Johan
;
Meuris, Marc
;
Heyns, Marc
;
Caymax, Matty
Journal
Surface Science
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1918
since deposited on 2021-10-19
Acq. date: 2025-10-23
Citations
Metrics
Views
1918
since deposited on 2021-10-19
Acq. date: 2025-10-23
Citations