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Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation

Date

2011
Journal article
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dc.contributor.authorMerckling, Clement
dc.contributor.authorChang, Y.C.
dc.contributor.authorLu, C.Y.
dc.contributor.authorPenaud, J.
dc.contributor.authorBrammertz, Guy
dc.contributor.authorScarrozza, Marco
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorKwo, J.
dc.contributor.authorHong, M.
dc.contributor.authorDekoster, Johan
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-19T16:15:50Z
dc.date.available2021-10-19T16:15:50Z
dc.date.issued2011
dc.identifier.issn0039-6028
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19417
dc.source.beginpage1778
dc.source.endpage1783
dc.source.issue19_20
dc.source.journalSurface Science
dc.source.volume605
dc.title

Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation

dc.typeJournal article
dspace.entity.typePublication
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