Browsing by Author "Schmolke, R."
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Publication Bulk micro defects of p/p epitaxial silicon wafers with nitrogen doped substrates and their gettering behavior
Proceedings paper2002, Semiconductor Silicon 2002. Proceedings of the 9th International Symposium on Silicon Materials Science and Technology, 12/05/2002, p.658-669Publication Characterization of interstitial related defects in p-silicon substrates by homoepitaxial
Proceedings paper2001, GADEST 2001 - Proceedings of the 9th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology;, p.231Publication Fabrication and characterization of artificial crystal originated particles
Journal article1999, Japanese Journal of Applied Physics. Part 2: Letters, (38) 12B, p.L1509-L1511Publication High resolution structure imaging of octohedral void defects
Journal article1997, Japanese Journal of Applied Physics. Part 2: Letters, (36) 9A_B, p.L1217-L1220Publication Impact of hydrogen on oxygen precipitation and gate oxide integrity after RTA processing
;Möller, T. ;Obermeier, G. ;Bearda, Twan ;Huber, A. ;Schmolke, R. ;von Ammon, W.Lerch, W.Proceedings paper2001, GADEST 2001 - Proceedings of the 9th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology;, p.127-132Publication Modelling of crystal originated particles and their impact on gate oxide integrity
Proceedings paper2002, Semiconductor Silicon 2002. Proceedings of the 9th International Symposium on Silicon Materials Science and Technology, 12/05/2002, p.528-539Publication Morphology change of artificial crystal originated particles
Journal article2000, Japanese Journal of Applied Physics. Part 2: Letters, (39) 8B, p.L841-L843Publication Process inspection by laser beam scanning of unpatterned wafers
Proceedings paper2000, SEMICON Europa 2000: European IEEE/SEMI Semiconductor Manufacturing Conference, 3/04/2000