Browsing by Author "Sii, H. K."
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Publication Degradation of oxides and oxynitrides under hot hole stress
Journal article2000, IEEE Trans. Electron Devices, (47) 2, p.378-386Publication Generation of hole traps in silicon dioxides
Proceedings paper2001, Proceedings of the 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits - IPFA, p.50-54Publication Hole trapping and trap generation in the gate silicon dioxide
Journal article2001, IEEE Trans. Electron Devices, (48) 6, p.1127-1135Publication Hot hole induced degradation of oxynitrides
Oral presentation1997, SISC-Conference; December 1997; Charleston, South-Carolina, USA.Publication Mechanism for the generation of interface state precursors
Journal article2000, Journal of Applied Physics, (87) 6, p.2967-2977Publication Relation between hydrogen and the generation of interface state precursors
Journal article1999, Microelectronic Engineering, (48) 1_4, p.135-138Publication The role of hydrogen in hole trap generation in oxides and oxynitrides
;Zhang, Wenqi ;Sii, H. K. ;Chen, A. H. ;Zhao, Chao ;Uren, M. J.; Oral presentation2001, SISC-Conference; December 2001; Washington, D.C.