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Browsing by Author "Stampfer, Bernhard"

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    Extraction of statistical gate oxide parameters from large MOSFET arrrays

    Stampfer, Bernhard
    ;
    Simicic, Marko  
    ;
    Weckx, Pieter  
    ;
    Abbasi, Arash
    ;
    Kaczer, Ben  
    ;
    Grasser, Tibor
    Journal article
    2020, IEEE Transactions on Device and Materials Reliability, (20) 2, p.251-257
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    Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?

    Waltl, Michael
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    Knobloch, Theresia
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    Tselios, Konstantinos
    ;
    Filipovic, Lado
    Journal article
    2022, ADVANCED MATERIALS, (34) 48, p.2201082
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    Separation of electron and hole trapping components of PBTI in SiON nMOS transistors

    Waltl, Michael
    ;
    Stampfer, Bernhard
    ;
    Rzepa, Gerhard
    ;
    Kaczer, Ben  
    ;
    Grasser, Tibor
    Journal article
    2020, Microelectronics Reliability, 114, p.113746
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    Statistical characterization of BTI and RTN using pMOS arrays

    Stampfer, Bernhard
    ;
    Simicic, Marko  
    ;
    Weckx, Pieter  
    ;
    Abbasi, Arash
    ;
    Kaczer, Ben  
    ;
    Grasser, Tibor
    Proceedings paper
    2019, IEEE International Integrated Reliability Workshop (IIRW), 13/10/2019

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