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Browsing by Author "Strangio, Sebastiano"

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    Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability

    Raghavan, Naga
    ;
    Degraeve, Robin  
    ;
    Fantini, Andrea  
    ;
    Goux, Ludovic  
    ;
    Strangio, Sebastiano
    Proceedings paper
    2013, International Reliability Physics Symposium - IRPS, 14/04/2013, p.5E.3
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    On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime

    Goux, Ludovic  
    ;
    Raghavan, Naga
    ;
    Fantini, Andrea  
    ;
    Nigon, Robin
    ;
    Strangio, Sebastiano
    Journal article
    2014, Journal of Applied Physics, (116) 13, p.134502
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    Single defect discharge events in vertical-nanowire tunnel-FETs

    Fiore, Anonio
    ;
    Franco, Jacopo  
    ;
    Cho, Moon Ju
    ;
    Crupi, Felice
    ;
    Strangio, Sebastiano
    Journal article
    2017, IEEE Transactions on Device and Materials Reliability, (17) 1, p.253-258
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    Understanding the intrinsic characteristics and memory trade-offs of sub-μA filamentary RRAM operation

    Goux, Ludovic  
    ;
    Fantini, Andrea  
    ;
    Degraeve, Robin  
    ;
    Raghavan, Naga
    ;
    Nigon, Robin
    Proceedings paper
    2013, VLSI Technology Symposium, 11/06/2013, p.162-163

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