Browsing by Author "Tang, Shun-Wei"

High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability

Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology

Ultra-Fast Positive Gate Bias Stress ( 100ns) to Understand the Hole Injection in Power p-GaN HEMTs

Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs