Publication:
High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability
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1343 since deposited on 2022-10-29
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Acq. date: 2026-01-25
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1343 since deposited on 2022-10-29
2last month
2last week
Acq. date: 2026-01-25
Citations