Publication:
High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability
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1347 since deposited on 2022-10-29
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Acq. date: 2026-03-18
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Statistics
Views
1347 since deposited on 2022-10-29
2last month
1last week
Acq. date: 2026-03-18
Citations