Publication:
High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability
Loading...
Journal
Abstract
Description
Metrics
Views
1341 since deposited on 2022-10-29
1last month
Acq. date: 2025-12-10
Citations
Metrics
Views
1341 since deposited on 2022-10-29
1last month
Acq. date: 2025-12-10
Citations