Publication:
High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability
| dc.contributor.author | Tang, Shun-Wei | |
| dc.contributor.author | Huang, Zhen-Hong | |
| dc.contributor.author | Chen, Szu-Chia | |
| dc.contributor.author | Lin, Wei-Syuan | |
| dc.contributor.author | de Jaeger, Brice | |
| dc.contributor.author | Wellekens, Dirk | |
| dc.contributor.author | Borga, Matteo | |
| dc.contributor.author | Bakeroot, Benoit | |
| dc.contributor.author | Decoutere, Stefaan | |
| dc.contributor.author | Wu, Tian-Li | |
| dc.contributor.imecauthor | de Jaeger, Brice | |
| dc.contributor.imecauthor | Wellekens, Dirk | |
| dc.contributor.imecauthor | Borga, Matteo | |
| dc.contributor.imecauthor | Bakeroot, Benoit | |
| dc.contributor.imecauthor | Decoutere, Stefaan | |
| dc.contributor.orcidimec | De Jaeger, Brice::0000-0001-8804-7556 | |
| dc.contributor.orcidimec | Borga, Matteo::0000-0003-3087-6612 | |
| dc.contributor.orcidimec | Bakeroot, Benoit::0000-0003-4392-1777 | |
| dc.contributor.orcidimec | Decoutere, Stefaan::0000-0001-6632-6239 | |
| dc.contributor.orcidimec | Wellekens, Dirk::0000-0003-4532-5784 | |
| dc.date.accessioned | 2023-04-06T13:36:42Z | |
| dc.date.available | 2022-10-29T02:58:15Z | |
| dc.date.available | 2023-04-06T13:36:42Z | |
| dc.date.issued | 2022 | |
| dc.description.wosFundingText | This work was financially supported by the "Center for the Semiconductor Technology Research" from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. Also supported in part by the National Science and Technology Council (NSTC), Taiwan, under Grant 111-2634-F-A49-008, 111-2622-8-A49-018-SB and the Young Scholar Fellowship Program under Grant 111-2636-E-A49-012. The review of this letter was arranged by Editor H. G. G. Xing. | |
| dc.identifier.doi | 10.1109/LED.2022.3198876 | |
| dc.identifier.issn | 0741-3106 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/40635 | |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | |
| dc.source.beginpage | 1625 | |
| dc.source.endpage | 1628 | |
| dc.source.issue | 10 | |
| dc.source.journal | IEEE ELECTRON DEVICE LETTERS | |
| dc.source.numberofpages | 4 | |
| dc.source.volume | 43 | |
| dc.subject.keywords | DEVICES | |
| dc.title | High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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