Browsing by Author "Trinkaus, H."
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Publication Asymmetric strain relaxation in patterned SiGe layer: a means to enhance carrier mobilities in Si cap layers
Journal article2007-01, Applied Physics Letters, (90) 3, p.32108Publication Enhancement of the relaxation of SiGe layers by He ion implantation using a delta-Si:C layer
Oral presentation2007, MRS 2007 Spring Meeting Symposium F: Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices IIPublication Fabrication, doping and characterization of strained silicon on SiO2 by ion beam techniques
Oral presentation2008, 16th International Conference on Ion Beam Modifications of MaterialsPublication Improvement of He ion induced SiGe layer relaxation by a thin Si:C layer
Proceedings paper2008, 4th International SiGe Technology and Device Meeting, 11/05/2008, p.40-41Publication Tensely strained silicon on SiGe produced by strain transfer
; ; Schaefer, H.Journal article2004-09, Applied Physics Letters, (85) 13, p.2499-2501