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Asymmetric strain relaxation in patterned SiGe layer: a means to enhance carrier mobilities in Si cap layers
Publication:
Asymmetric strain relaxation in patterned SiGe layer: a means to enhance carrier mobilities in Si cap layers
Date
2007-01
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Buca, D.
;
Hollander, B.
;
Feste, S.
;
Lenk, S.
;
Trinkaus, H.
;
Mantl, S.
;
Loo, Roger
;
Caymax, Matty
Journal
Applied Physics Letters
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1941
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations
Metrics
Views
1941
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations