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Browsing by Author "Tuomisto, F."

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    Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GeSi1-x/SiO2/(100)Si structures with nm-thin GexSi1-x layers

    Madia, O.
    ;
    Nguyen, A.P.D.
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    Thoan, N.H.
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    Afanasiev, Valeri  
    ;
    Stesmans, Andre  
    ;
    Souriau, Laurent  
    Journal article
    2014, Applied Surface Science, 291, p.11-15
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    Vacancy clusters in germanium

    Peaker, A.R.
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    Markevich, V.P.
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    Slotte, J.
    ;
    Kuitunen, K.
    ;
    Tuomisto, F.
    ;
    Satta, Alessandra
    Proceedings paper
    2008, Gettering and Defect Engineering in Semiconductor Technology XII, 14/10/2007, p.125-130

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