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Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GeSi1-x/SiO2/(100)Si structures with nm-thin GexSi1-x layers
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1849 since deposited on 2021-10-22
Acq. date: 2025-10-24
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Views
1849 since deposited on 2021-10-22
Acq. date: 2025-10-24
Citations