Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GeSi1-x/SiO2/(100)Si structures with nm-thin GexSi1-x layers

dc.contributor.author	Madia, O.
dc.contributor.author	Nguyen, A.P.D.
dc.contributor.author	Thoan, N.H.
dc.contributor.author	Afanasiev, Valeri
dc.contributor.author	Stesmans, Andre
dc.contributor.author	Souriau, Laurent
dc.contributor.author	Slotte, J.
dc.contributor.author	Tuomisto, F.
dc.contributor.imecauthor	Afanasiev, Valeri
dc.contributor.imecauthor	Stesmans, Andre
dc.contributor.imecauthor	Souriau, Laurent
dc.contributor.orcidimec	Souriau, Laurent::0000-0002-5138-5938
dc.date.accessioned	2021-10-22T03:18:18Z
dc.date.available	2021-10-22T03:18:18Z
dc.date.issued	2014
dc.identifier.issn	0169-4332
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/24174
dc.identifier.url	http://www.sciencedirect.com/science/article/pii/S0169433213016668
dc.source.beginpage	11
dc.source.endpage	15
dc.source.journal	Applied Surface Science
dc.source.volume	291
dc.title	Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GeSi1-x/SiO2/(100)Si structures with nm-thin GexSi1-x layers
dc.type	Journal article
dspace.entity.type	Publication
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