imec Institutional Repository Browsing {{ collection }} by Author "Van Houtte, P."

Publication

Characterization of reduced-pressure chemical vapor deposition polycrystalline silicon germanium deposited at temperatures <= 550 degrees C

Sedky, S.

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Witvrouw, Ann

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Caymax, Matty

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Saerens, A.

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Van Houtte, P.

Journal article

2002, Journal of Materials Research, (17) 7, p.1580-1586

Publication

Effect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400 degrees C

Sedky, Sherif

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Witvrouw, Ann

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Saerens, Annelies

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Van Houtte, P.

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Poortmans, Jef

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Baert, Kris

Journal article

2001, Journal of Materials Research, (16) 9, p.2607-2612

Publication

Impact of Ni-silicide grain orientation on the strain and stress fields induced in patterned silicon

Torregiani, Cristina

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Maex, Karen

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Benedetti, Alessandro

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Bender, Hugo

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Van Houtte, P.

Journal article

2007, Applied Physics Letters, (90) 5, p.54101

Publication

Internal stresses in aluminium interconnects

Saerens, Annelies

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Van Houtte, P.

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Witvrouw, Ann

Oral presentation

1999, 5th European Conference on Residual Stress - ECRS5; 28-30 September 1999; Delft, The Netherlands.

Publication

Internal stresses in aluminium interconnects

Saerens, Annelies

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Van Houtte, P.

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Witvrouw, Ann

Journal article

2000, Materials Science Forum, 347-349, p.556-561

Publication

The role of grain boundary structure on electromigration-induced drift in pure Al and Al(0.5wt% Cu)

Proost, Joris

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Samajdar, I.

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Verlinden, B.

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Van Houtte, P.

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Maex, Karen

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Delaey, L.

Journal article

1998, Scripta Materialia, (39) 8, p.1039-1045

Browsing by Author "Van Houtte, P."