Browsing by Author "Vanalme, G. M."

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A ballistic electron emission microscopy (BEEM) study of the barrier height change of Au/n-GaAs Schottky barriers due to reactive ion etching

Vanalme, G. M.
;
Van Meirhaeghe, R. L.
;
Cardon, F.
;
Van Daele, Peter
Journal article
1997, Semiconductor Science and Technology, 12, p.907-912
A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors

Van Meirhaeghe, R. L.
;
Vanalme, G. M.
;
Goubert, L.
;
Cardon, F.
;
Van Daele, P.
Proceedings paper
1997, Microscopy of Semiconducting Materials 1997, 7/04/1997, p.619-622
A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments

Vanalme, G. M.
;
Goubert, L.
;
Van Meirhaeghe, R. L.
;
Cardon, F.
;
Van Daele, Peter
Journal article
1999, Semiconductor Science and Technology, (14) 9, p.871-877