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A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors
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A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors
Date
1997
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Van Meirhaeghe, R. L.
;
Vanalme, G. M.
;
Goubert, L.
;
Cardon, F.
;
Van Daele, P.
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1916
since deposited on 2021-09-30
Acq. date: 2025-10-22
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Views
1916
since deposited on 2021-09-30
Acq. date: 2025-10-22
Citations