Publication:

A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors

Date

1997
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorVan Meirhaeghe, R. L.
dc.contributor.authorVanalme, G. M.
dc.contributor.authorGoubert, L.
dc.contributor.authorCardon, F.
dc.contributor.authorVan Daele, P.
dc.date.accessioned2021-09-30T09:54:09Z
dc.date.available2021-09-30T09:54:09Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2251
dc.source.beginpage619
dc.source.conferenceMicroscopy of Semiconducting Materials 1997
dc.source.conferencedate7/04/1997
dc.source.conferencelocationOxford UK
dc.source.endpage622
dc.title

A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
2227.pdf
Size:
233.57 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions