Browsing by Author "Vandenberghe, William"
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Publication A 35nm diameter vertical silicon nanowire short-gate tunnelFET
Proceedings paper2009, Nanotechnology Workshop, 13/06/2009Publication A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors
Journal article2012, Applied Physics Letters, (100) 19, p.193509Publication A simulation study on process sensitivity of a line tunnel field-effect transistor
Journal article2013, IEEE Transactions on Electron Devices, (60) 3, p.1019-1027Publication An envelope function formalism for lattice-matched heterostructures
Journal article2015, Physica B: Condensed Matter, 470-471, p.69-75Publication Analytical model for a tunnel field-effect transistor
Proceedings paper2008, 14th IEEE Mediterranean Electrotechnical Conference - MELECON, 5/05/2008, p.923-928Publication Analytical model for point and line tunneling in a tunnel field-effect transistor
Proceedings paper2008, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 9/09/2008, p.137-140Publication Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization
Journal article2008, Journal of Applied Physics, (104) 6, p.64514Publication Boosting the on-current of Si-based tunnel field-effect transistors
Meeting abstract2010, 218th ECS Meeting, 10/10/2010, p.1893Publication Boosting the on-current of Si-based tunnel field-effect transistors
Proceedings paper2010, SiGe, Ge, and Related Compounds 4: Materials, Processing and Devices, 10/10/2010, p.363-372Publication Boosting the on-current of silicon nanowire tunnel-FETs
Meeting abstract2008, IEEE Silicon Nanoelectronics Workshop, 15/06/2008Publication Breakdown of the Kane model for Zener tunneling
Meeting abstract2010, APS March Meeting, 14/03/2010Publication Carrier transport in two-dimensional topological insulator nanoribbons in the presence of vacancy defects
Journal article2019, 2D Materials, (6) 2, p.25011Publication Complementary silicon-based heterostructure tunnel-FETs with high tunnel rates
Journal article2008, IEEE Electron Device Letters, (29) 12, p.1398-1401Publication Counterdoped pocket thickness optimization of tunnel field-effect transistors
Journal article2013, IEEE Transactions on Electron Devices, (60) 1, p.6-12Publication Digital-circuit analysis of short gate tunnel-FETs for low-voltage applications
Journal article2011, Semiconductor Science and Technology, (26) 8, p.085001-1Publication Direct and indirect band-to-band tunneling in germanium-based TFETs
Journal article2012, IEEE Transactions on Electron Devices, (59) 2, p.292-301Publication Field induced quantum confinement in indirect semiconductors: quantum mechanical and modified semiclassical model
Proceedings paper2011, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 8/09/2011Publication Figure of merit for and identification of sub-60 mV/decade devices
Journal article2013, Applied Physics Letters, (102) 1, p.13510Publication Ge and III/V devices on Si for advanced CMOS
Meeting abstract2009, 5th Handai Nanoscience and Nanotechnology International Symposium, 1/09/2009Publication Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields: A rigorous approach
Journal article2011, Journal of Applied Physics, (109) 12, p.124503
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