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Browsing by Author "Vantomme, A."

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    Adsorption of O2 on Ge(100): Atomic geometry and site-specific electronic structure

    Fleischmann, Claudia  
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    Schouteden, K.
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    Merckling, Clement  
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    Sioncke, Sonja
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    Meuris, Marc  
    Journal article
    2012, Journal of Physical Chemistry C, (9925) 9929, p.116-18
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    Direct structural identification and quantification of the split-vacancy configuration for implanted Sn in diamond

    Wahl, U
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    Correia, J.G.
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    Villarreal, R
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    Bourgeois, Emilie  
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    Gulka, Michal  
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    Nesladek, Milos  
    Journal article
    2020, Physical Review Letters, (125) 4, p.45301
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    Growth and characterization of atomic layer deposited WCxNy

    Martin Hoyas, Ana
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    Travaly, Youssef
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    Schuhmacher, Jorg
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    Sajavaara, T.
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    Whelan, Caroline
    Oral presentation
    2005, AVS 5th International Conference on Microelectronics and Interfaces (ICMI)
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    Radiative decay of the 229mTh nuclear clock isomer in different host materials

    Pineda, S., V
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    Chhetri, P.
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    Bara, S.
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    Elskens, Y.
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    Casci, S.
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    Alexandrova, A. N.
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    Au, M.
    Journal article
    2025-JAN 15, PHYSICAL REVIEW RESEARCH, (7) 1
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    (Si)GeSn requirements for optical device applications and solar cells

    Takeuchi, Shotaro
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    Vincent, Benjamin  
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    Temst, Kristiaan  
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    Vantomme, A.
    ;
    Dekoster, Johan  
    Proceedings paper
    2010-05, Workshop: GeSn Developments and Future Applications, 28/05/2010

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