Browsing by Author "Verbrugge, Beatrijs"
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Publication Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized Plasma Enhanced Atomic Layer Deposition (PEALD) process for TiN electrode
Proceedings paper2011, IEEE International Interconnect Technology Conference and Materials for Advanced Metallization - IITC/MAM, 8/05/2011, p.7.3Publication Investigation of forming and its controllability in novel HfO2-based 1T1R 40nm-crossbar RRAM cells
Proceedings paper2011, International Conference on Solid State Devices and Materials - SSDM, 28/09/2011, p.1005-1006