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Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized Plasma Enhanced Atomic Layer Deposition (PEALD) process for TiN electrode
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1967 since deposited on 2021-10-19
1last month
Acq. date: 2025-12-08
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Metrics
Views
1967 since deposited on 2021-10-19
1last month
Acq. date: 2025-12-08
Citations