Publication:

Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized Plasma Enhanced Atomic Layer Deposition (PEALD) process for TiN electrode

Date

2011
Proceedings Paper
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dc.contributor.authorChen, Yangyin
dc.contributor.authorGoux, Ludovic
dc.contributor.authorPantisano, Luigi
dc.contributor.authorSwerts, Johan
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorMertens, Sofie
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorWang, Xin Peng
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKubicek, Stefan
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorVerbrugge, Beatrijs
dc.contributor.authorJossart, Nico
dc.contributor.authorAltimime, Laith
dc.contributor.authorJurczak, Gosia
dc.contributor.authorKittl, Jorge
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorWouters, Dirk
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorJossart, Nico
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.contributor.orcidimecAfanasiev, Valeri::0000-0001-5018-4539
dc.contributor.orcidimecGovoreanu, Bogdan::0000-0001-7210-2979
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-19T12:45:41Z
dc.date.available2021-10-19T12:45:41Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18666
dc.source.beginpage7.3
dc.source.conferenceIEEE International Interconnect Technology Conference and Materials for Advanced Metallization - IITC/MAM
dc.source.conferencedate8/05/2011
dc.source.conferencelocationDresden Germany
dc.title

Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized Plasma Enhanced Atomic Layer Deposition (PEALD) process for TiN electrode

dc.typeProceedings paper
dspace.entity.typePublication
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