Browsing by Author "Wang, Hongyue"
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Publication Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy
Journal article2021-11-22, JOURNAL OF APPLIED PHYSICS, (130) 20, p.205701Publication Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration
Journal article2020, IEEE Transactions on Electron Devices, (67) 11, p.4827-4833Publication Materials and defect aspects of III-V and III-N devices for high-speed analog/RF applications
; ; ; ; ; ; Proceedings paper2020, 2020 IEEE 15th International Conference on Solid-State and Integrated Circuits Technology - ICSICT 2020, 3/11/2020, p.316-319Publication Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs
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