Browsing by Author "Wang, X."
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Publication 16 QAM burst mode receiver for upstream communication over CATV networks
Proceedings paper1998, Proceedings of the 40th Midwest Symposium on Circuits and Systems dedicated to the Memory of Professor Mac Valkenburg; 3-6 Augus, p.573-576Publication An investigation of field reduction effect on NBTI parameter characterization and lifetime prediction using a constant field stress method
;Zhou, L. ;Bo, T. ;Ji, Z. ;Yang, H. ;Xu, H. ;Liu, Q.; ;Wang, X. ;Ma, X. ;Li, Y. ;Yin, H.Du, A.Journal article2020, IEEE Transactions on Device and Materials Reliability, (20) 1, p.92-96Publication Insights into the effect of TiN thickness scaling on DC and AC NBTI characteristics in replacement metal gate pMOSFETs
;Zhou, L. ;Liu, Q. ;Yang, H. ;Ji, Z. ;Xu, H. ;Tang, B.; ;Jiang, H. ;Luo, Y. ;Wang, X. ;Ma, X.Li, Y.Journal article2020, IEEE Transactions on Device and Materials Reliability, (20) 3, p.498-505Publication Monolithic TCAD simulation of phase-change memory (PCM/PRAM) plus Ovonic Threshold Switch (OTS) selector device
;Thesberg, M. ;Stanojevic, Z. ;Baumgartner, O. ;Kernstock, C. ;Leonelli, D. ;Barci, M.Wang, X.Journal article2023, SOLID-STATE ELECTRONICS, (199) January, p.Art.: 108504Publication Reduction of NiGe/n- and p-Ge specific contact resistivity by enhanced dopant segregation in the presence of carbon during nickel germanidation
;Duan, N. ;Luo, J. ;Wang, G. ;Liu, J.; ;Mao, S. ;Radamson, H. ;Wang, X. ;Li, J. ;Wang, W.Zhao, C.Journal article2016, IEEE Transactions on Electron Devices, (63) 11, p.4546-4549Publication Understanding frequency dependence of trap generation under AC negative bias temperature instability stress in Si p-FinFETs
;Zhou, L. ;Zhang, Q. ;Yang, H. ;Ji, Z. ;Zhang, Z. ;Liu, Q. ;Xu, H. ;Tang, B.; ;Ma, X.Wang, X.Journal article2020, IEEE Electron Device Letters, (41) 7, p.965-968