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Browsing by Author "Wilk, G."

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    ALCVD hafnium silicates for low power gate stacks

    Maes, Jan  
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    Laitinen, O.
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    De Witte, Hilde
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    Deweerd, Wim
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    Delabie, Annelies  
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    Conard, Thierry  
    Oral presentation
    2004, Atomic Layer Deposition Conference
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    Atomic layer deposition of hafnium silicate from HfCl4, SiCl4, and H2O

    Fedorenko, Yanina
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    Swerts, Johan  
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    Maes, Jan  
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    Tois, E.
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    Haukka, S.
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    Wang, C.G
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    Wilk, G.
    Journal article
    2007, Electrochemical and Solid-State Letters, (10) 5, p.H149-H152
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    Atomic layer deposition: an enabling technology for microelectronic device manufacturing

    Lee, F.
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    Marcus, S.
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    Shero, E.
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    Wilk, G.
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    Swerts, Johan  
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    Maes, Jan  
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    Blomberg, T.
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    Delabie, Annelies  
    Proceedings paper
    2007, IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 11/06/2007, p.359-365
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    Impact of Hf-precursor choice on scaling and performance of high-k gate dielectrics

    Maes, Jan  
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    Fedorenko, Yanina
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    Delabie, Annelies  
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    Ragnarsson, Lars-Ake  
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    Swerts, Johan  
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    Nyns, Laura  
    Proceedings paper
    2007, Physics and Technology of High-k Gate Dielectrics 5, 7/10/2007, p.59-72
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    Nitrided hafnium silicates for gate dielectrics

    Wang, C.G.
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    Velasco, H.
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    Verghese, M.
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    Shero, E.
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    Wilk, G.
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    Maes, Jan  
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    Laitinen, O.
    ;
    Deweerd, Wim
    Meeting abstract
    2004, AVS 51st International Symposium, 14/11/2004, p.DI-MoA5

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