Browsing by Author "Yoneoka, Masashi"
Now showing 1 - 3 of 3
- Results per page
- Sort Options
Publication Gate-length dependent radiation damage in 2-MeV electron-irradiated Si1-xGexS/D p-MOSFETs
Journal article2012, Materials Science Forum, 725, p.235-238Publication Increased radiation hardness of short-channel electron-irradiated Si1-xGex source/drain p-type metal oxide semiconductor field-effect transistors at higher Ge content
Journal article2013, Japanese Journal of Applied Physics, (52) 9, p.94201Publication Thermal recovery process of electron irradiated Si1-xCx source/drain n-MOSFETs
Journal article2015, Physica Status Solidi C, (12) 12, p.1405-1408